F2-Kr-Ne

Fluorine-Krypton-Neon (F₂/Kr/Ne) is also a specialized electronic gas mixture used in high-end manufacturing. Its applications are similar to those of Fluorine-Argon-Neon, with its primary use being in the plasma etching process for semiconductor chips.

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Fluorine-krypton-neon (F₂/Kr/Ne) is also a specialty electronic gas mixture used in high-end manufacturing.

It shares similar applications with fluorine, argon, and neon, with its core use lying in the plasma etching process for semiconductor chips. The key difference is that krypton gas replaces argon gas. Krypton has a different atomic mass and ionization characteristics from argon, which in turn alters the energy and properties of the plasma, thereby influencing the etching rate, selectivity, and anisotropy (the precise control of etching direction).

Therefore, fluorine-krypton-neon gases are primarily used in specific advanced semiconductor processes that demand extremely high precision in etching (such as smaller nanometer-scale nodes). By selecting different inert gases (e.g., Ar, Kr, Ne) in combination with fluorine gas, engineers can fine-tune and optimize the etching process to meet the optimal etching conditions for various materials and structures.

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